Skip to content
Surf Wiki
Save to docs
general/international-technology-roadmap-for-semiconductors-lithography-nodes

From Surf Wiki (app.surf) — the open knowledge base

List of semiconductor scale examples

None


None

Listed are many semiconductor scale examples for various metal–oxide–semiconductor field-effect transistor (MOSFET, or MOS transistor) semiconductor manufacturing process nodes.

Timeline of MOSFET demonstrations

PMOS and NMOS

DateChannel lengthOxide thicknessMOSFET logicResearcher(s)OrganizationRef
[20,000 nm](20-mm-process)[100 nm](100-nm)PMOSMohamed M. Atalla, Dawon KahngBell Telephone Laboratories
NMOS
[10,000 nm](10-mm-process)nmPMOSMohamed M. Atalla, Dawon KahngBell Telephone Laboratories
NMOS
8,000 nm150 nmNMOSChih-Tang Sah, Otto Leistiko, A.S. GroveFairchild Semiconductor
[5,000 nm](6-mm-process)[170 nm](180-nm-process)PMOS
[1,000 nm](1-mm-process)PMOSRobert H. Dennard, Fritz H. Gaensslen, Hwa-Nien YuIBM T.J. Watson Research Center
19737,500 nmNMOSSohichi SuzukiNECtitle=1970s: Development and evolution of microprocessorsurl=http://www.shmj.or.jp/english/pdf/ic/exhibi748E.pdfwebsite=Semiconductor History Museum of Japanaccess-date=27 June 2019}}
[6,000 nm](6-mm-process)PMOSToshibatitle=1973: 12-bit engine-control microprocessor (Toshiba)url=http://www.shmj.or.jp/english/pdf/ic/exhibi739E.pdfwebsite=Semiconductor History Museum of Japanaccess-date=27 June 2019}}
1,000 nm[ nm](45-nm-process)NMOSRobert H. Dennard, Fritz H. Gaensslen, Hwa-Nien YuIBM T.J. Watson Research Center
[500 nm](500-nm-process)
[1,500 nm](1-5-mm-process)[ nm](22-nm-process)NMOSRyoichi Hori, Hiroo Masuda, Osamu MinatoHitachilast1=Kubofirst1=Masaharulast2=Horifirst2=Ryoichilast3=Minatofirst3=Osamulast4=Satofirst4=Kikujititle=1976 IEEE International Solid-State Circuits Conference. Digest of Technical Paperschapter=A threshold voltage controlling circuit for short channel MOS integrated circuitsdate=February 1976volume=XIXpages=54–55doi=10.1109/ISSCC.1976.1155515s2cid=21048622 }}
[3,000 nm](3-mm-process)NMOSIntel
1,000 nm[25 nm](28-nm-process)NMOSWilliam R. Hunter, L. M. Ephrath, Alice CramerIBM T.J. Watson Research Center
[100 nm](130-nm-process)[5 nm](5-nm)NMOSToshio Kobayashi, Seiji Horiguchi, K. KiuchiNippon Telegraph and Telephone
150 nm[2.5 nm](3-nm-process)NMOSToshio Kobayashi, Seiji Horiguchi, M. Miyake, M. OdaNippon Telegraph and Telephone
[75 nm](90-nm-process)NMOSStephen Y. Chou, Henry I. Smith, Dimitri A. AntoniadisMIT
[60 nm](65-nm-process)NMOSStephen Y. Chou, Henry I. Smith, Dimitri A. AntoniadisMITlast1=Choufirst1=Stephen Y.last2=Smithfirst2=Henry I.last3=Antoniadisfirst3=Dimitri A.title=Sub-100-nm channel-length transistors fabricated using x-ray lithographyjournal=Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomenadate=January 1986volume=4issue=1pages=253–255doi=10.1116/1.583451bibcode=1986JVSTB...4..253Cissn=0734-211X}}
200 nm[3.5 nm](5-nm-process)PMOSToshio Kobayashi, M. Miyake, K. DeguchiNippon Telegraph and Telephone
[40 nm](40-nm)NMOSMizuki Ono, Masanobu Saito, Takashi YoshitomiToshiba
[16 nm](16-nm)PMOSHisao Kawaura, Toshitsugu Sakamoto, Toshio BabaNEC
[50 nm](55-nm-process)[1.3 nm](3-nm-process)NMOSKhaled Z. Ahmed, Effiong E. Ibok, Miryeong SongAdvanced Micro Devices (AMD)
[6 nm](7-nm-process)PMOSBruce Doris, Omer Dokumaci, Meikei IeongIBM
[3 nm](3-nm-process)PMOSHitoshi Wakabayashi, Shigeharu YamagamiNEC
NMOS

CMOS (single-gate)

DateChannel lengthOxide thicknessResearcher(s)OrganizationRef
Chih-Tang Sah, Frank WanlassFairchild Semiconductortitle=1963: Complementary MOS Circuit Configuration is Inventedurl=https://www.computerhistory.org/siliconengine/complementary-mos-circuit-configuration-is-invented/website=Computer History Museumaccess-date=6 July 2019}}
196820,000 nm[ nm](130-nm-process)RCA Laboratorieslast1=Lojekfirst1=Botitle=History of Semiconductor Engineeringdate=2007publisher=Springer Science & Business Mediaisbn=9783540342588page=330url=https://books.google.com/books?id=2cu1Oh_COv8C&pg=PA330}}
1970[10,000 nm](10-mm-process)nmRCA Laboratories
[2,000 nm](3-mm-process)A. Aitken, R.G. Poulsen, A.T.P. MacArthur, J.J. WhiteMitel Semiconductor
[3,000 nm](3-mm-process)Toshiaki Masuhara, Osamu Minato, Toshio Sasaki, Yoshio SakaiHitachi Central Research Laboratorytitle=1978: Double-well fast CMOS SRAM (Hitachi)url=http://www.shmj.or.jp/english/pdf/ic/exhibi727E.pdfwebsite=Semiconductor History Museum of Japanaccess-date=5 July 2019}}
[1,200 nm](1-5-mm-process)[ nm](32-nm-process)R.J.C. Chwang, M. Choi, D. Creek, S. Stern, P.H. PelleyIntellast1=Gealowfirst1=Jeffrey Carltitle=Impact of Processing Technology on DRAM Sense Amplifier Designurl=https://core.ac.uk/download/pdf/4426308.pdfpublisher=Massachusetts Institute of Technologyvia=COREdate=10 August 1990pages=149–166access-date=25 June 2019}}
[900 nm](1-mm-process)[ nm](16-nm-process)Tsuneo Mano, J. Yamada, Junichi Inoue, S. NakajimaNippon Telegraph and Telephone (NTT)last1=Manofirst1=Tsuneolast2=Yamadafirst2=J.last3=Inouefirst3=Junichilast4=Nakajimafirst4=S.title=1983 IEEE International Solid-State Circuits Conference. Digest of Technical Paperschapter=Submicron VLSI memory circuitsdate=February 1983volume=XXVIpages=234–235doi=10.1109/ISSCC.1983.1156549s2cid=42018248 }}
[1,000 nm](1-mm-process)[ nm](28-nm-process)G.J. Hu, Yuan Taur, Robert H. Dennard, Chung-Yu TingIBM T.J. Watson Research Center
[800 nm](800-nm-process)[17 nm](20-nm-process)T. Sumi, Tsuneo Taniguchi, Mikio Kishimoto, Hiroshige HiranoMatsushitalast1=Sumifirst1=T.last2=Taniguchifirst2=Tsuneolast3=Kishimotofirst3=Mikiolast4=Hiranofirst4=Hiroshigelast5=Kuriyamafirst5=H.last6=Nishimotofirst6=T.last7=Oishifirst7=H.last8=Tetakawafirst8=S.title=1987 IEEE International Solid-State Circuits Conference. Digest of Technical Paperschapter=A 60ns 4Mb DRAM in a 300mil DIPdate=1987volume=XXXpages=282–283doi=10.1109/ISSCC.1987.1157106s2cid=60783996 }}
700 nm[12 nm](12-nm)Tsuneo Mano, J. Yamada, Junichi Inoue, S. NakajimaNippon Telegraph and Telephone (NTT)last1=Manofirst1=Tsuneolast2=Yamadafirst2=J.last3=Inouefirst3=Junichilast4=Nakajimafirst4=S.last5=Matsumurafirst5=Toshirolast6=Minegishifirst6=K.last7=Miurafirst7=K.last8=Matsudafirst8=T.last9=Hashimotofirst9=C.last10=Namatsufirst10=H.title=1987 IEEE International Solid-State Circuits Conference. Digest of Technical Paperschapter=Circuit technologies for 16Mb DRAMsdate=1987volume=XXXpages=22–23doi=10.1109/ISSCC.1987.1157158s2cid=60984466 }}
[500 nm](500-nm)[12.5 nm](14-nm-process)Hussein I. Hanafi, Robert H. Dennard, Yuan Taur, Nadim F. HaddadIBM T.J. Watson Research Center
[250 nm](250-nm-process)Naoki Kasai, Nobuhiro Endo, Hiroshi KitajimaNEC
400 nm[ nm](10-nm-process)M. Inoue, H. Kotani, T. Yamada, Hiroyuki YamauchiMatsushitalast1=Inouefirst1=M.last2=Kotanifirst2=H.last3=Yamadafirst3=T.last4=Yamauchifirst4=Hiroyukilast5=Fujiwarafirst5=A.last6=Matsushimafirst6=J.last7=Akamatsufirst7=Hironorilast8=Fukumotofirst8=M.last9=Kubotafirst9=M.last10=Nakaofirst10=I.last11=Aoititle=1988 IEEE International Solid-State Circuits Conference, 1988 ISSCC. Digest of Technical Paperschapter=A 16mb Dram with an Open Bit-Line Architecturedate=1988pages=246–doi=10.1109/ISSCC.1988.663712s2cid=62034618 }}
[100 nm](110-nm-process)Ghavam G. Shahidi, Bijan Davari, Yuan Taur, James D. WarnockIBM T.J. Watson Research Center
1993[350 nm](350-nm-process)Sony
1996150 nmMitsubishi Electric
1998[180 nm](180-nm-process)TSMC
[5 nm](5-nm)Hitoshi Wakabayashi, Shigeharu Yamagami, Nobuyuki IkezawaNECurl=http://www.thefreelibrary.com/NEC+test-produces+world's+smallest+transistor.-a0111295563title=NEC test-produces world's smallest transistorwebsite=Thefreelibrary.comaccess-date=7 December 2017}}

Multi-gate MOSFET (MuGFET)

DateChannel lengthMuGFET typeResearcher(s)OrganizationRef
DGMOSToshihiro Sekigawa, Yutaka HayashiElectrotechnical Laboratory (ETL)
1987[2,000 nm](3-mm-process)DGMOSToshihiro SekigawaElectrotechnical Laboratory (ETL)first1=Hanpeilast1=Koikefirst2=Tadashilast2=Nakagawafirst3=Toshirolast3=Sekigawafirst4=E.last4=Suzukifirst5=Toshiyukilast5=Tsutsumititle=Primary Consideration on Compact Modeling of DG MOSFETs with Four-terminal Operation Modejournal=TechConnect Briefsdate=23 February 2003volume=2issue=2003pages=330–333s2cid=189033174url=https://pdfs.semanticscholar.org/1a31/399021f62ae3d00dd6dd42d2bc7483598d26.pdfarchive-url=https://web.archive.org/web/20190926013047/https://pdfs.semanticscholar.org/1a31/399021f62ae3d00dd6dd42d2bc7483598d26.pdfurl-status=deadarchive-date=26 September 2019 }}
[250 nm](250-nm-process)DGMOSBijan Davari, Wen-Hsing Chang, Matthew R. Wordeman, C.S. OhIBM T.J. Watson Research Center
[180 nm](180-nm)
GAAFETFujio Masuoka, Hiroshi Takato, Kazumasa Sunouchi, N. OkabeToshiba
200 nmFinFETDigh Hisamoto, Toru Kaga, Yoshifumi Kawamoto, Eiji TakedaHitachi Central Research Laboratory
[17 nm](20-nm-process)FinFETDigh Hisamoto, Chenming Hu, Tsu-Jae King Liu, Jeffrey BokorUniversity of California (Berkeley)last1=Tsu-Jae Kingfirst1=Liuauthor-link1=Tsu-Jae King Liutitle=FinFET: History, Fundamentals and Futureurl=https://people.eecs.berkeley.edu/~tking/presentations/KingLiu_2012VLSI-Tshortcoursewebsite=University of California, Berkeleypublisher=Symposium on VLSI Technology Short Coursedate=June 11, 2012access-date=9 July 2019archive-url=https://web.archive.org/web/20160528220227/http://people.eecs.berkeley.edu/~tking/presentations/KingLiu_2012VLSI-Tshortcoursearchive-date=28 May 2016url-status=live}}
2001[15 nm](16-nm-process)FinFETChenming Hu, Yang-Kyu Choi, Nick Lindert, Tsu-Jae King LiuUniversity of California (Berkeley)last1=Hufirst1=Chenmingauthor1-link=Chenming Hulast2=Choifirst2=Yang-Kyulast3=Lindertfirst3=N.last4=Xuanfirst4=P.last5=Tangfirst5=S.last6=Hafirst6=D.last7=Andersonfirst7=E.last8=Bokorfirst8=J.last9=Tsu-Jae Kingfirst9=Liutitle=International Electron Devices Meeting. Technical Digest (Cat. No. 01CH37224)chapter=Sub-20 nm CMOS FinFET technologiesdate=December 2001pages=19.1.1–19.1.4doi=10.1109/IEDM.2001.979526isbn=0-7803-7050-3s2cid=8908553 }}
[10 nm](10-nm-process)FinFETShibly Ahmed, Scott Bell, Cyrus Tabery, Jeffrey BokorUniversity of California (Berkeley)last1=Ahmedfirst1=Shiblylast2=Bellfirst2=Scottlast3=Taberyfirst3=Cyruslast4=Bokorfirst4=Jeffreylast5=Kyserfirst5=Davidlast6=Hufirst6=Chenminglast7=Liufirst7=Tsu-Jae Kinglast8=Yufirst8=Binlast9=Changfirst9=Lelandtitle=Digest. International Electron Devices Meetingchapter=FinFET scaling to 10 nm gate lengthdate=December 2002pages=251–254doi=10.1109/IEDM.2002.1175825citeseerx=10.1.1.136.3757chapter-url=https://www.eecs.wsu.edu/~osman/EE597/FINFET/finfet4.pdfisbn=0-7803-7462-2s2cid=7106946access-date=2019-10-11archive-date=2020-05-27archive-url=https://web.archive.org/web/20200527205136/https://www.eecs.wsu.edu/~osman/EE597/FINFET/finfet4.pdfurl-status=dead }}
[3 nm](3-nm-process)GAAFETHyunjin Lee, Yang-kyu Choi, Lee-Eun Yu, Seong-Wan RyuKAIST

Other types of MOSFET

DateChannel
length
(nm)Oxide
thickness
(nm)MOSFET
typeResearcher(s)OrganizationRef
TFTPaul K. WeimerRCA Laboratories
GaAsH. Becke, R. Hall, J. WhiteRCA Laboratories
100,000[](130-nm-process)TFTT.P. Brody, H.E. KunigWestinghouse Electric
FGMOSDawon Kahng, Simon Min SzeBell Telephone Laboratories
MNOSH.A. Richard Wegener, A.J. Lincoln, H.C. PaoSperry Corporation
BiMOSHung-Chang Lin, Ramachandra R. IyerWestinghouse Electric
BiCMOSHung-Chang Lin, Ramachandra R. Iyer, C.T. HoWestinghouse Electric
1969VMOSHitachititle=Advances in Discrete Semiconductors March Onurl=https://www.powerelectronics.com/content/advances-discrete-semiconductors-marchjournal=Power Electronics Technologypublisher=Informapages=52–6access-date=31 July 2019date=September 2005archive-url=https://web.archive.org/web/20060322222716/http://powerelectronics.com/mag/509PET26.pdfarchive-date=22 March 2006url-status=live}}
DMOSY. Tarui, Y. Hayashi, Toshihiro SekigawaElectrotechnical Laboratory (ETL)
ISFETPiet BergveldUniversity of Twentelast1=Bergveldfirst1=P.title=Development of an Ion-Sensitive Solid-State Device for Neurophysiological Measurementsjournal=IEEE Transactions on Biomedical Engineeringdate=January 1970volume=BME-17issue=1pages=70–71doi=10.1109/TBME.1970.4502688pmid=5441220bibcode=1970ITBE...17...70B }}
[1000](1-mm-process)DMOSY. Tarui, Y. Hayashi, Toshihiro SekigawaElectrotechnical Laboratory (ETL)
1977VDMOSJohn Louis MollHP Labs
LDMOSHitachilast1=Duncanfirst1=Bentitle=High Performance Audio Power Amplifiersdate=1996publisher=Elsevierisbn=9780080508047pages=[177–8, 406](https://archive.org/details/highperfomanceau0000dunc/page/177)url=https://archive.org/details/highperfomanceau0000dunc/page/177}}
IGBTBantval Jayant Baliga, Margaret LazeriGeneral Electric
[2000](3-mm-process)BiCMOSH. Higuchi, Goro Kitsukawa, Takahide Ikeda, Y. NishioHitachi
[300](350-nm-process)K. Deguchi, Kazuhiko Komatsu, M. Miyake, H. NamatsuNippon Telegraph and Telephone
[1000](1-mm-process)BiCMOSH. Momose, Hideki Shibata, S. Saitoh, Jun-ichi MiyamotoToshiba
[90](90-nm-process)[8.3](10-nm-process)Han-Sheng Lee, L.C. PuzioGeneral Motors
[60](65-nm-process)Ghavam G. Shahidi, Dimitri A. Antoniadis, Henry I. SmithMIT
[10](10-nm-process)Bijan Davari, Chung-Yu Ting, Kie Y. Ahn, S. BasavaiahIBM T.J. Watson Research Centerlast1=Davarifirst1=Bijanauthor1-link=Bijan Davarilast2=Tingfirst2=Chung-Yulast3=Ahnfirst3=Kie Y.last4=Basavaiahfirst4=S.last5=Hufirst5=Chao-Kunlast6=Taurfirst6=Yuanlast7=Wordemanfirst7=Matthew R.last8=Aboelfotohfirst8=O.first11=Michael R.title=Submicron Tungsten Gate MOSFET with 10 nm Gate Oxidejournal=1987 Symposium on VLSI Technology. Digest of Technical Papersdate=May 1987pages=61–62url=https://ieeexplore.ieee.org/document/4480422}}
[800](800-nm-process)BiCMOSRobert H. Havemann, R. E. Eklund, Hiep V. TranTexas Instruments
[30](32-nm-process)EJ-MOSFETHisao Kawaura, Toshitsugu Sakamoto, Toshio BabaNEC
1998[32](32-nm)NEC
19998
8EJ-MOSFETHisao Kawaura, Toshitsugu Sakamoto, Toshio BabaNEC

Commercial products using micro-scale MOSFETs

Products featuring 20 μm manufacturing process

  • RCA's CD4000 series of integrated circuits (ICs) beginning in 1968.

Products featuring 10 μm manufacturing process

Main article: 10 μm process

  • Intel 4004, the first single-chip microprocessor CPU, launched in 1971.
  • Intel 8008 CPU launched in 1972.

Products featuring 8 μm manufacturing process

  • Intel 1103, an early dynamic random-access memory (DRAM) chip launched in 1970.
  • MOS Technology 6502 1 MHz CPU launched in 1975.

Products featuring 6 μm manufacturing process

Main article: 6 μm process

  • Toshiba TLCS-12, a microprocessor developed for the Ford EEC (Electronic Engine Control) system in 1973.
  • Intel 8080 CPU launched in 1974 was manufactured using this process.
  • The Television Interface Adaptor, the custom graphics and audio chip developed for the Atari 2600 in 1977.
  • MOS Technology SID, a programmable sound generator developed for the Commodore 64 in 1982.
  • MOS Technology VIC-II, a video display controller developed for the Commodore 64 in 1982 (5 μm).

Products featuring 3 μm manufacturing process

Main article: 3 μm process

  • Intel 8085 CPU launched in 1976.
  • Intel 8086 CPU launched in 1978.
  • Intel 8088 CPU launched in 1979.
  • Motorola 68000 8 MHz CPU launched in 1979 (3.5 μm).

Products featuring 1.5 μm manufacturing process

Main article: 1.5 μm process

  • NEC's 64kb SRAM memory chip in 1981.
  • Intel 80286 CPU launched in 1982.
  • The Amiga Advanced Graphics Architecture (initially sold in 1992) included chips such as Alice that were manufactured using a 1.5 μm CMOS process.

Products featuring 1 μm manufacturing process

Main article: 1 μm process

  • NTT's DRAM memory chips, including its 64kb chip in 1979 and 256kb chip in 1980.
  • NEC's 1Mb DRAM memory chip in 1984.
  • Intel 80386 CPU launched in 1985.

Products featuring 800 nm manufacturing process

Main article: 800 nm process

  • NTT's 1Mb DRAM memory chip in 1984.
  • NEC and Toshiba used this process for their 4Mb DRAM memory chips in 1986.
  • Hitachi, IBM, Matsushita and Mitsubishi Electric used this process for their 4Mb DRAM memory chips in 1987.
  • Toshiba's 4Mb EPROM memory chip in 1987.
  • Hitachi, Mitsubishi and Toshiba used this process for their 1Mb SRAM memory chips in 1987.
  • Intel 486 CPU launched in 1989.
  • microSPARC I launched in 1992.
  • First Intel P5 Pentium CPUs at 60 MHz and 66 MHz launched in 1993.

Products featuring 600 nm manufacturing process

Main article: 600 nm process

  • Mitsubishi Electric, Toshiba and NEC introduced 16Mb DRAM memory chips manufactured with a 600nm process in 1989.
  • NEC's 16Mb EPROM memory chip in 1990.
  • Mitsubishi's 16Mb flash memory chip in 1991.
  • Intel 80486DX4 CPU launched in 1994.
  • IBM/Motorola PowerPC 601, the first PowerPC chip, was produced in 0.6 μm.
  • Intel Pentium CPUs at 75 MHz, 90 MHz and 100 MHz.

Products featuring 350 nm manufacturing process

Main article: 350 nm process

  • Sony's 16Mb SRAM memory chip in 1994.
  • NEC VR4300 (1995), used in the Nintendo 64 game console.
  • Intel Pentium Pro (1995), Pentium (P54CS, 1995), and initial Pentium II CPUs (Klamath, 1997).
  • AMD K5 (1996) and original AMD K6 (Model 6, 1997) CPUs.
  • Parallax Propeller, 8 core microcontroller.

Products featuring 250 nm manufacturing process

Main article: 250 nm process

  • Hitachi's 16Mb SRAM memory chip in 1993.
  • Hitachi and NEC introduced 256Mb DRAM memory chips manufactured with this process in 1993, followed by Matsushita, Mitsubishi Electric and Oki in 1994.
  • NEC's 1Gb DRAM memory chip in 1995.
  • Hitachi's 128Mb NAND flash memory chip in 1996.
  • DEC Alpha 21264A, which was made commercially available in 1999.
  • AMD K6-2 Chomper and Chomper Extended. Chomper was released on May 28, 1998.
  • AMD K6-III "Sharptooth" used 250 nm.
  • Mobile Pentium MMX Tillamook, released in August 1997.
  • Pentium II Deschutes.
  • Dreamcast console's Hitachi SH-4 CPU and PowerVR2 GPU, released in 1998.
  • Pentium III Katmai.
  • Initial PlayStation 2's Emotion Engine CPU.

Processors using 180 nm manufacturing technology

Main article: 180 nm process

  • Intel Coppermine E- October 1999
  • Sony PlayStation 2 console's Emotion Engine and Graphics Synthesizer – March 2000
  • ATI Radeon R100 and RV100 Radeon 7000 – 2000
  • AMD Athlon Thunderbird – June 2000
  • Intel Celeron (Willamette) – May 2002
  • Motorola PowerPC 7445 and 7455 (Apollo 6) – January 2002

Processors using 130 nm manufacturing technology

Main article: 130 nm process

  • Fujitsu SPARC64 V – 2001
  • Gekko by IBM and Nintendo (GameCube console) – 2001
  • Motorola PowerPC 7447 and 7457 – 2002
  • IBM PowerPC G5 970 – October 2002 – June 2003
  • Intel Pentium III Tualatin and Coppermine – 2001-04
  • Intel Celeron Tualatin-256 – 2001-10-02
  • Intel Pentium M Banias – 2003-03-12
  • Intel Pentium 4 Northwood- 2002-01-07
  • Intel Celeron Northwood-128 – 2002-09-18
  • Intel Xeon Prestonia and Gallatin – 2002-02-25
  • VIA C3 – 2001
  • AMD Athlon XP Thoroughbred, Thorton, and Barton
  • AMD Athlon MP Thoroughbred – 2002-08-27
  • AMD Athlon XP-M Thoroughbred, Barton, and Dublin
  • AMD Duron Applebred – 2003-08-21
  • AMD K7 Sempron Thoroughbred-B, Thorton, and Barton – 2004-07-28
  • AMD K8 Sempron Paris – 2004-07-28
  • AMD Athlon 64 Clawhammer and Newcastle – 2003-09-23
  • AMD Opteron Sledgehammer – 2003-06-30
  • Elbrus 2000 1891ВМ4Я (1891VM4YA) – 2008-04-27 http://www.mcst.ru/b_4-5.shtml
  • MCST-R500S 1891BM3 – 2008-07-27 https://web.archive.org/web/20151101211823/http://www.mcst.ru/b_18-19.shtml
  • Vortex 86SX – http://www.dmp.com.tw/

Commercial products using nano-scale MOSFETs

Chips using 90 nm manufacturing technology

Main article: 90 nm process

  • Sony–Toshiba Emotion Engine+Graphics Synthesizer (PlayStation 2) – 2003
  • IBM PowerPC G5 970FX – 2004
  • Elpida Memory's 90 nm DDR2 SDRAM process – 2005
  • IBM PowerPC G5 970MP – 2005
  • IBM PowerPC G5 970GX – 2005
  • IBM Waternoose Xbox 360 Processor – 2005
  • IBM–Sony–Toshiba Cell processor – 2005
  • Intel Pentium 4 Prescott – 2004-02
  • Intel Celeron D Prescott-256 – 2004-05
  • Intel Pentium M Dothan – 2004-05
  • Intel Celeron M Dothan-1024 – 2004-08
  • Intel Xeon Nocona, Irwindale, Cranford, Potomac, Paxville – 2004-06
  • Intel Pentium D Smithfield – 2005-05
  • AMD Athlon 64 Winchester, Venice, San Diego, Orleans – 2004-10
  • AMD Athlon 64 X2 Manchester, Toledo, Windsor – 2005-05
  • AMD Sempron Palermo and Manila – 2004-08
  • AMD Turion 64 Lancaster and Richmond – 2005-03
  • AMD Turion 64 X2 Taylor and Trinidad – 2006-05
  • AMD Opteron Venus, Troy, and Athens – 2005-08
  • AMD Dual-core Opteron Denmark, Italy, Egypt, Santa Ana, and Santa Rosa
  • VIA C7 – 2005-05
  • Loongson (Godson) 2Е STLS2E02 – 2007-04
  • Loongson (Godson) 2F STLS2F02 – 2008-07
  • MCST-4R – 2010-12
  • Elbrus-2C+ – 2011-11

Processors using 65 nm manufacturing technology

Main article: 65 nm process

  • Sony–Toshiba EE+GS (PStwo) – 2005
  • Intel Pentium 4 (Cedar Mill) – 2006-01-16
  • Intel Pentium D 900-series – 2006-01-16
  • Intel Celeron D (Cedar Mill cores) – 2006-05-28
  • Intel Core – 2006-01-05
  • Intel Core 2 – 2006-07-27
  • Intel Xeon (Sossaman) – 2006-03-14
  • AMD Athlon 64 series (starting from Lima) – 2007-02-20
  • AMD Turion 64 X2 series (starting from Tyler) – 2007-05-07
  • AMD Phenom series
  • IBM's Cell Processor – PlayStation 3 – 2007-11-17
  • IBM's z10
  • Microsoft Xbox 360 "Falcon" CPU – 2007–09
  • Microsoft Xbox 360 "Opus" CPU – 2008
  • Microsoft Xbox 360 "Jasper" CPU – 2008–10
  • Microsoft Xbox 360 "Jasper" GPU – 2008–10
  • Sun UltraSPARC T2 – 2007–10
  • AMD Turion Ultra – 2008-06
  • TI OMAP 3 Family – 2008-02
  • VIA Nano – 2008-05
  • Loongson – 2009
  • NVIDIA GeForce 8800GT GPU – 2007

Processors using 45 nm technology

Main article: 45 nm process

  • Matsushita released the 45 nm Uniphier in 2007.
  • Wolfdale, Yorkfield, Yorkfield XE and Penryn are Intel cores sold under the Core 2 brand.
  • Intel Core i7 series processors, i5 750 (Lynnfield and Clarksfield)
  • Pentium Dual-Core Wolfdale-3M are current Intel mainstream dual core sold under the Pentium brand.
  • Diamondville, Pineview are current Intel cores with hyper-threading sold under the Intel Atom brand.
  • AMD Deneb (Phenom II) and Shanghai (Opteron) Quad-Core Processors, Regor (Athlon II) dual core processors https://www.amd.com/us-en/0,,3715_15503,00.html?redir=45nm01, Caspian (Turion II) mobile dual core processors.
  • AMD (Phenom II) "Thuban" Six-Core Processor (1055T)
  • Xenon in the Xbox 360 S model.
  • Sony–Toshiba Cell Broadband Engine in PlayStation 3 Slim model – September 2009.
  • Samsung S5PC110, as known as Hummingbird.
  • Texas Instruments OMAP 36xx.
  • IBM POWER7 and z196
  • Fujitsu SPARC64 VIIIfx series
  • Espresso (microprocessor) Wii U CPU

Chips using 32 nm technology

Main article: 32 nm process

  • Toshiba produced commercial 32Gb NAND flash memory chips with the 32nm process in 2009.
  • Intel Core i3 and i5 processors, released in January 2010
  • Intel 6-core processor, codenamed Gulftown
  • Intel i7-970, was released in late July 2010, priced at approximately US$900
  • AMD FX Series processors, codenamed Zambezi and based on AMD's Bulldozer architecture, were released in October 2011. The technology used a 32 nm SOI process, two CPU cores per module, and up to four modules, ranging from a quad-core design costing approximately US$130 to a $280 eight-core design.
  • Ambarella Inc. announced the availability of the A7L system-on-a-chip circuit for digital still cameras, providing 1080p60 high-definition video capabilities in September 2011

Chips using 24–28 nm technology

  • SK Hynix announced that it could produce a 26 nm flash chip with 64 Gb capacity; Intel Corp. and Micron Technology had by then already developed the technology themselves. Announced in 2010.
  • Toshiba announced that it was shipping 24 nm flash memory NAND devices on August 31, 2010.
  • In 2016 MCST's 28 nm processor Elbrus-8S went for serial production.

Chips using 22 nm technology

Main article: 22 nm process

  • Intel Core i7 and Intel Core i5 processors based on Intel's Ivy Bridge 22 nm technology for series 7 chip-sets went on sale worldwide on April 23, 2012.

Chips using 20 nm technology

  • Samsung Electronics began mass production of 64Gb NAND flash memory chips using a 20 nm process in 2010.
  • Nvidia Tegra X1 (Nintendo Switch and Nvidia Shield TV)

Chips using 16 nm technology

  • TSMC first began 16nm FinFET chip production in 2013.
  • Nvidia Tegra X1+ (later Nintendo Switch and Nvidia Shield TV models)

Chips using 14 nm technology

Main article: 14 nm process

  • Intel Core i7 and Intel Core i5 processors based on Intel's Broadwell 14 nm technology was launched in January 2015.
  • AMD Ryzen processors based on AMD's Zen or Zen+ architectures and which uses 14 nm FinFET technology.

Chips using 10 nm technology

Main article: 10 nm process

  • Samsung announced that it had begun mass production of multi-level cell (MLC) flash memory chips using a 10nm process in 2013. On 17 October 2016, Samsung Electronics announced mass production of SoC chips at 10 nm.
  • TSMC began commercial production of 10 nm chips in early 2016, before moving onto mass production in early 2017.
  • Samsung began shipping Galaxy S8 smartphone in April 2017 using the company's 10 nm processor.
  • Apple delivered second-generation iPad Pro tablets powered with TSMC-produced Apple A10X chips using the 10 nm FinFET process in June 2017.

Chips using 7 nm technology

Main article: 7 nm process

  • TSMC began risk production of 256 Mbit SRAM memory chips using a 7 nm process in April 2017.
  • Samsung and TSMC began mass production of 7 nm devices in 2018.
  • Apple A12 and Huawei Kirin 980 mobile processors, both released in 2018, use 7 nm chips manufactured by TSMC.
  • AMD began using TSMC 7 nm starting with the Vega 20 GPU in November 2018, with Zen 2-based CPUs and APUs from July 2019, and for both PlayStation 5 and Xbox Series X/S consoles' APUs, released both in November 2020.

Chips using 5 nm technology

Main article: 5 nm process

  • Samsung began production of 5 nm chips (5LPE) in late 2018.
  • TSMC began production of 5 nm chips (CLN5FF) in April 2019.

Chips using 3 nm technology

Main article: 3 nm process

  • TSMC have announced plans to release 3nm devices during 2021–2022.
  • Samsung Electronics have begun risk production of 3 nm GAAFET transistors in June 2022.
  • Apple A17 Pro (iPhone 15 Pro)

References

References

  1. "Angstrom".
  2. (2002). "Semiconductor Devices: Physics and Technology". [[Wiley (publisher).
  3. (June 1960). "Silicon–silicon dioxide field induced surface devices". [[Carnegie Mellon University Press]].
  4. (2013). "High-Frequency Integrated Circuits". [[Cambridge University Press]].
  5. (May 1965). "Electron and hole mobilities in inversion layers on thermally oxidized silicon surfaces". [[IEEE Transactions on Electron Devices]].
  6. (December 1972). "1972 International Electron Devices Meeting".
  7. (September 1975). "Short Channel MOS-IC Based on Accurate Two Dimensional Device Design". [[Japanese Journal of Applied Physics]].
  8. (2007). "Recollections on MOSFET Scaling". IEEE Solid-State Circuits Society Newsletter.
  9. "1970s: Development and evolution of microprocessors".
  10. "NEC 751 (uCOM-4)". The Antique Chip Collector's Page.
  11. "1973: 12-bit engine-control microprocessor (Toshiba)".
  12. (1978). "Encyclopedia of Computer Science and Technology: Volume 10 – Linear and Matrix Algebra to Microorganisms: Computer-Assisted Identification". [[CRC Press]].
  13. (October 1974). "Design of ion-implanted MOSFET's with very small physical dimensions". [[IEEE Journal of Solid-State Circuits]].
  14. (February 1976). "1976 IEEE International Solid-State Circuits Conference. Digest of Technical Papers".
  15. "Intel Microprocessor Quick Reference Guide".
  16. (April 1979). "1 /spl mu/m MOSFET VLSI technology. V. A single-level polysilicon technology using electron-beam lithography". [[IEEE Journal of Solid-State Circuits]].
  17. (December 1984). "1984 International Electron Devices Meeting".
  18. (December 1985). "1985 International Electron Devices Meeting".
  19. (December 1985). "Observation of electron velocity overshoot in sub-100-nm-channel MOSFET's in Silicon". [[IEEE Electron Device Letters]].
  20. (January 1986). "Sub-100-nm channel-length transistors fabricated using x-ray lithography". Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena.
  21. (1987). "Subhalf-micrometer p-channel MOSFET's with 3.5-nm gate Oxide fabricated using X-ray lithography". [[IEEE Electron Device Letters]].
  22. (December 1993). "Proceedings of IEEE International Electron Devices Meeting".
  23. (1997). "Proposal of Pseudo Source and Drain MOSFETs for Evaluating 10-nm Gate MOSFETs". [[Japanese Journal of Applied Physics]].
  24. (1998). "1998 Symposium on VLSI Technology Digest of Technical Papers (Cat. No. 98CH36216)".
  25. (1998). "56th Annual Device Research Conference Digest (Cat. No. 98TH8373)".
  26. (December 2002). "Digest. International Electron Devices Meeting".
  27. (2010). "Nanometer CMOS". Pan Stanford Publishing.
  28. (2002-12-09). "IBM claims world's smallest silicon transistor – TheINQUIRER".
  29. (December 2003). "IEEE International Electron Devices Meeting 2003".
  30. "1963: Complementary MOS Circuit Configuration is Invented".
  31. (February 1963). "Nanowatt logic using field-effect metal–oxide semiconductor triodes".
  32. (2007). "History of Semiconductor Engineering". [[Springer Science & Business Media]].
  33. (December 1976). "1976 International Electron Devices Meeting".
  34. "1978: Double-well fast CMOS SRAM (Hitachi)".
  35. (February 1978). "1978 IEEE International Solid-State Circuits Conference. Digest of Technical Papers".
  36. (September 1978). "Short Channel Hi-CMOS Device and Circuits". ESSCIRC 78: 4th European Solid State Circuits Conference – Digest of Technical Papers.
  37. (10 August 1990). "Impact of Processing Technology on DRAM Sense Amplifier Design". [[Massachusetts Institute of Technology]].
  38. (February 1983). "1983 IEEE International Solid-State Circuits Conference. Digest of Technical Papers".
  39. (February 1983). "1983 IEEE International Solid-State Circuits Conference. Digest of Technical Papers".
  40. (December 1983). "1983 International Electron Devices Meeting".
  41. (1987). "1987 IEEE International Solid-State Circuits Conference. Digest of Technical Papers".
  42. (1987). "1987 IEEE International Solid-State Circuits Conference. Digest of Technical Papers".
  43. (September 1987). "0.5 μm CMOS Device Design and Characterization". ESSDERC '87: 17th European Solid State Device Research Conference.
  44. (December 1987). "1987 International Electron Devices Meeting".
  45. (1988). "1988 IEEE International Solid-State Circuits Conference, 1988 ISSCC. Digest of Technical Papers".
  46. (December 1990). "International Technical Digest on Electron Devices".
  47. "Memory".
  48. "0.18-micron Technology". [[TSMC]].
  49. "NEC test-produces world's smallest transistor".
  50. (August 1984). "Calculated threshold-voltage characteristics of an XMOS transistor having an additional bottom gate". Solid-State Electronics.
  51. (23 February 2003). "Primary Consideration on Compact Modeling of DG MOSFETs with Four-terminal Operation Mode". TechConnect Briefs.
  52. (December 1988). "Technical Digest., International Electron Devices Meeting".
  53. (December 1988). "Technical Digest., International Electron Devices Meeting".
  54. (December 1988). "Technical Digest., International Electron Devices Meeting".
  55. (2017). "Micro- and Nanoelectronics: Emerging Device Challenges and Solutions". [[CRC Press]].
  56. (2017). "Novel Compound Semiconductor Nanowires: Materials, Devices, and Applications". [[CRC Press]].
  57. (2008). "FinFETs and Other Multi-Gate Transistors". Springer Science & Business Media.
  58. (December 1989). "International Technical Digest on Electron Devices Meeting".
  59. "IEEE Andrew S. Grove Award Recipients". [[Institute of Electrical and Electronics Engineers]].
  60. (June 11, 2012). "FinFET: History, Fundamentals and Future". Symposium on VLSI Technology Short Course.
  61. (December 1998). "International Electron Devices Meeting 1998. Technical Digest (Cat. No. 98CH36217)".
  62. (December 2001). "International Electron Devices Meeting. Technical Digest (Cat. No. 01CH37224)".
  63. (December 2002). "Digest. International Electron Devices Meeting".
  64. (June 2006). "2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers".
  65. (1 April 2006). "Still Room at the Bottom (nanometer transistor developed by Yang-kyu Choi from the Korea Advanced Institute of Science and Technology )". Nanoparticle News.
  66. (June 1962). "The TFT A New Thin-Film Transistor". [[Proceedings of the IRE]].
  67. (1 January 2013). "Thin Film Transistor Technology—Past, Present, and Future". The Electrochemical Society Interface.
  68. (2010). "Fundamentals of III-V Semiconductor MOSFETs". [[Springer Science & Business Media]].
  69. (October 1966). "A HIGH-GAIN InAs THIN-FILM TRANSISTOR". Applied Physics Letters.
  70. (2010). "Fundamentals of III-V Semiconductor MOSFETs". [[Springer Science & Business Media]].
  71. (July–August 1967). "A floating gate and its application to memory devices". [[The Bell System Technical Journal]].
  72. (October 1967). "1967 International Electron Devices Meeting".
  73. (July 1968). "A Monolithic Mos-Bipolar Audio Amplifier". IEEE Transactions on Broadcast and Television Receivers.
  74. (1990). "BiCMOS Technology and Applications". [[Springer Science & Business Media]].
  75. (October 1968). "1968 International Electron Devices Meeting".
  76. (September 2005). "Advances in Discrete Semiconductors March On". [[Informa]].
  77. (1988). "Fet Technology and Application". [[CRC Press]].
  78. (September 1969). "Extended Abstracts of the 1969 Conference on Solid State Devices".
  79. (December 1972). "1972 International Electron Devices Meeting".
  80. (January 1970). "Development of an Ion-Sensitive Solid-State Device for Neurophysiological Measurements". [[IEEE Transactions on Biomedical Engineering]].
  81. Chris Toumazou. (December 2011). "40 years of ISFET technology: From neuronal sensing to DNA sequencing". [[Electronics Letters]].
  82. (October 1970). "DSA enhancement – Depletion MOS IC".
  83. (1996). "High Performance Audio Power Amplifiers". [[Elsevier]].
  84. (2015). "The IGBT Device: Physics, Design and Applications of the Insulated Gate Bipolar Transistor". [[William Andrew (publisher).
  85. (December 1984). "1984 International Electron Devices Meeting".
  86. (1985). "Step-and-Repeat X-ray/Photo Hybrid Lithography for 0.3 μm Mos Devices". 1985 Symposium on VLSI Technology. Digest of Technical Papers.
  87. (1985). "1.0-/spl mu/m n-Well CMOS/Bipolar Technology". [[IEEE Journal of Solid-State Circuits]].
  88. (November 1986). "The electrical properties of subquarter-micrometer gate-length MOSFET's". [[IEEE Electron Device Letters]].
  89. (December 1986). "1986 International Electron Devices Meeting".
  90. (May 1987). "Submicron Tungsten Gate MOSFET with 10 nm Gate Oxide". 1987 Symposium on VLSI Technology. Digest of Technical Papers.
  91. (December 1987). "1987 International Electron Devices Meeting".
  92. (1997). "1997 55th Annual Device Research Conference Digest".
  93. (12 June 2000). "Observation of source-to-drain direct tunneling current in 8 nm gate electrically variable shallow junction metal–oxide–semiconductor field-effect transistors". [[Applied Physics Letters]].
  94. (2007). "History of Semiconductor Engineering". [[Springer Science & Business Media]].
  95. Corder, Mike. (Spring 1999). "Big Things in Small Packages". Sun Microelectronics.
  96. "History of the Intel Microprocessor - Listoid".
  97. "Design case history: the Commodore 64".
  98. Mueller, S. (2006-07-21). "Microprocessors from 1971 to the Present". informIT.
  99. (17 July 1991). "Amiga Manual: Amiga 3000+ System Specification 1991".
  100. "Propeller I semiconductor process technology? Is it 350nm or 180nm?".
  101. . (21 April 2003). ["Emotion Engine and Graphics Synthesizer Used in the Core of PlayStation Become One Chip"](https://www.sie.com/content/dam/corporate/en/corporate/release/pdf/030421be.pdf). *[[Sony]]*.
  102. Krewell, Kevin (21 October 2002). [http://www.eecg.toronto.edu/~moshovos/ACA07/lecturenotes/ultrasparc5%2520(mpr).pdf "Fujitsu's SPARC64 V Is Real Deal".] ''[[Microprocessor Report]]''.
  103. "ソニー、65nm対応の半導体設備を導入。3年間で2,000億円の投資".
  104. [http://www.tgdaily.com/content/view/31877/135/ TG Daily – AMD preps 65 nm Turion X2 processors] {{webarchive. link. (2007-09-13)
  105. "OMAP 3 family of multimedia applications processors".
  106. (October 10, 2007). "Panasonic starts to sell a New-generation UniPhier System LSI". [[Panasonic]].
  107. (11 February 2009). "Toshiba Makes Major Advances in NAND Flash Memory with 3-bit-per-cell 32nm generation and with 4-bit-per-cell 43nm technology". [[Toshiba]].
  108. [http://www.informationweek.com/news/security/management/showArticle.jhtml?articleID=222200708 "Intel Debuts 32-NM Westmere Desktop Processors"]. InformationWeek, 7 January 2010. Retrieved 2011-12-17.
  109. Cangeloso, Sal. (February 4, 2010). "Intel's 6-core 32nm processors arriving soon". Geek.com.
  110. (September 26, 2011). "Ambarella A7L Enables the Next Generation of Digital Still Cameras with 1080p60 Fluid Motion Video". News release.
  111. [http://www.eetimes.com/electronics-news/4087542/Hynix-Samsung-push-NAND-flash-below-30-nm Article reporting Hynix 26 nm technology announcement]
  112. [http://www.toshiba.co.jp/about/press/2010_08/pr3101.htm?from=RSS_PRESS&uid=20100831-1112e Toshiba launches 24nm process NAND flash memory]
  113. "The Russian 28-nm processor "Elbrus-8C" will go into production in 2016.".
  114. (25 August 2020). "Another domestic data storage system on "Elbrus" has been created".
  115. [http://semiaccurate.com/2012/04/23/intel-launches-ivy-bridge-amid-crushing-marketing-buzzwords/ Intel launches Ivy Bridge...]
  116. "History". [[Samsung]].
  117. "16/12nm Technology". [[TSMC]].
  118. [http://www.eetimes.com/document.asp?doc_id=1325057 EETimes Intel Rolls 14nm Broadwell in Vegas]
  119. (2015-12-04). "AMD Zen Architecture Overview".
  120. (11 April 2013). "Samsung Mass Producing 128Gb 3-bit MLC NAND Flash". [[Tom's Hardware]].
  121. (Oct 2016). "Samsung Starts Industry's First Mass Production of System-on-Chip with 10-Nanometer FinFET Technology".
  122. "10nm Technology". [[TSMC]].
  123. "Latest Samsung Galaxy Smartphones {{pipe".
  124. techinsights.com. "10nm Rollout Marching Right Along".
  125. "7nm Technology". [[TSMC]].
  126. [https://www.digitimes.com/news/a20180622PD204.html TSMC ramping up 7nm chip production] Monica Chen, Hsinchu; Jessie Shen, DIGITIMES Friday 22 June 2018
  127. "Apple's A12 Bionic is the first 7-nanometer smartphone chip". Engadget.
  128. Smith, Ryan. "AMD Announces Radeon Instinct MI60 & MI50 Accelerators: Powered By 7nm Vega".
  129. Cutress, Ian. "AMD Ryzen 3000 Announced: Five CPUs, 12 Cores for $499, Up to 4.6 GHz, PCIe 4.0, Coming 7/7".
  130. Smith, Ryan. "Sony Teases Next-Gen PlayStation: Custom AMD Chip with Zen 2 CPU & Navi GPU, SSD Too".
  131. Howse, Brett. "Xbox at E3 2019: Xbox Project Scarlett Console Launching Holiday 2020".
  132. Shilov, Anton. "Samsung Completes Development of 5nm EUV Process Technology".
  133. (3 April 2019). "TSMC and OIP Ecosystem Partners Deliver Industry's First Complete Design Infrastructure for 5nm Process Technology". TSMC.
  134. (12 December 2016). "TSMC Plans New Fab for 3nm". [[EE Times]].
  135. Armasu, Lucian. (11 January 2019). "Samsung Plans Mass Production of 3nm GAAFET Chips in 2021". [[Tom's Hardware]].
  136. Smith, Ryan. "Samsung Starts 3nm Production: The Gate-All-Around (GAAFET) Era Begins".
Info: Wikipedia Source

This article was imported from Wikipedia and is available under the Creative Commons Attribution-ShareAlike 4.0 License. Content has been adapted to SurfDoc format. Original contributors can be found on the article history page.

Want to explore this topic further?

Ask Mako anything about List of semiconductor scale examples — get instant answers, deeper analysis, and related topics.

Research with Mako

Free with your Surf account

Content sourced from Wikipedia, available under CC BY-SA 4.0.

This content may have been generated or modified by AI. CloudSurf Software LLC is not responsible for the accuracy, completeness, or reliability of AI-generated content. Always verify important information from primary sources.

Report