1N4148 signal diode

History

Texas Instruments announced the 1N914 diode in 1960. It was registered at JEDEC by Texas Instruments no later than 1961, and was second-sourced by 11 manufacturers that same year.

The 1N4148 was registered at JEDEC in 1968 as a silicon switching signal diode for military and industrial applications. It was second-sourced by many manufacturers; Texas Instruments listed their version of the device in an October 1966 data sheet.

The 1N914 and 1N4148 have an enduring popularity in low-current applications.

Overview

As the most common mass-produced switching diode, the 1N4148 replaced the older 1N914. They can be used interchangeably, and are cross-reference replacements for each other. They differed mainly in their leakage current specification, however, today most manufacturers list common specifications. For example, Vishay lists the same leakage current for both parts:

• 25 nA at -20 V, 25°C
• 5 μA at -75 V, 25°C
• 50 μA at -20 V, 150°C

Packages

The JEDEC registered part numbers 1N914 and 1N4148 were originally only available in an axial package, but over time similar parts became available in surface-mount packages too.

; Through-hole package:

• 1N4148 in DO-35 glass axial package.

; Surface-mount packages:

• LL4148 in MiniMELF package.
• 1N4148W in SOD-123 package.
• 1N4148WS in SOD-323 package.
• 1N4148WT in SOD-523 package.

Note: Some 1N4148 family surface-mount packages are marked with "T4" text.

Specifications

Absolute maximum ratings (stress ratings, consult datasheet for recommended ratings)

• VRRM = 100 V (maximum repetitive reverse voltage)
• IO = 200 mA (average rectified forward current)
• IF = 300 mA (DC forward current)
• If = 400 mA (recurring peak forward current)
• IFSM = 1 A at 1 s pulse width; 4 A at 1 μs pulse width (non-repetitive peak forward surge current)

Electrical and thermal characteristics

• VF = 1 V at 10 mA (maximum forward voltage)
• VR = 75 V at 5 μA; 100 V at 100 μA (minimum breakdown voltage and reverse leakage current)
• trr = 4 ns (maximum reverse-recovery time)
• PD = 500 mW (maximum power dissipation)

References

References

1. (March 1960). "Texas Instruments 1N914 / 1N916 New Product Advertisement". Electronic Industries magazine.
2. (April 1961). "Semiconductor Diode & Rectifier Characteristics Tabulation". Derivation and Tabulation Associates.
3. (November 25, 1968). "Announcement of Electron Device Type Registration, Release No. 4443A.". The Joint Electron Device Engineering Council.
4. ''The Transistor and Diode Data Book'', Texas Instruments Incorporated, publication no. CC-413 71243-73-CSS, no date, page 10-34
5. (September 2004). "A Tutorial on Diodes". [[Nuts and Volts]].
6. (1973). "The Semiconctor Data Library". Motorola Semiconductor Products.
7. (May 2012). "1N4148 / 1N4448 Datasheet; DO-35 Package.".
8. (January 2017). "1N4148W / BAV16W Datasheet; SOD-123 Package.".
9. (March 2016). "1N4148WS / BAV16WS Datasheet; SOD-323 Package.".
10. (March 2018). "1N4148WT Datasheet; SOD-523 Package.".
11. (June 2015). "1N4148 / 1N4448 / 1N914 / 1N916 Datasheet; DO-35 Package.".
12. (June 2015). "1N4148 Datasheet; DO-35 Package.".
13. (June 2015). "LL4148 Datasheet; MiniMELF Package.".
14. (February 2013). "1N4148 Datasheet; DO-35 Package.".
15. (March 2021). "1N4148W Datasheet; SOD-123 Package.".
16. (December 2020). "1N4148WX Datasheet; SOD-323 Package.".
17. (December 2020). "1N4148X Datasheet; SOD-523 Package.".
18. (November 2012). "1N4148UR-1 Datasheet; MiniMELF Package.".
19. (February 2020). "1N914 Datasheet; DO-35 Package.".
20. (July 2017). "1N4148 Datasheet; DO-35 Package.".
21. (February 2018). "1N4148W Datasheet; SOD-123 Package.".
22. (July 2017). "1N4148WS Datasheet; SOD-323 Package.".