Trimethylsilane

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title: "Trimethylsilane" type: doc version: 1 created: 2026-02-28 author: "Wikipedia contributors" status: active scope: public tags: ["carbosilanes", "trimethylsilyl-compounds"] topic_path: "general/carbosilanes" source: "https://en.wikipedia.org/wiki/Trimethylsilane" license: "CC BY-SA 4.0" wikipedia_page_id: 0 wikipedia_revision_id: 0

|ImageFileL1 = Trimethylsilane.svg |ImageFileR1 = Trimethylsilane-3D-balls.png |PIN = Trimethylsilane |Section1={{Chembox Identifiers |CASNo = 993-07-7 |CASNo_Ref = |UNII_Ref = |UNII = 9L70DJH2K0 |ChemSpiderID = 63614 |EINECS = 213-603-0 |PubChem = 70435 | StdInChI=1S/C3H10Si/c1-4(2)3/h4H,1-3H3 | StdInChIKey = PQDJYEQOELDLCP-UHFFFAOYSA-N |SMILES = CSiHC |Section2={{Chembox Properties | C=3 | H=10 | Si=1 |Density = 0.638 g cm−3 |MeltingPtC = -135.9 |BoilingPtC = 6.7 |Section3={{Chembox Hazards |GHSPictograms = |GHSSignalWord = Danger |HPhrases = |PPhrases = |NFPA-H = 2 |NFPA-F = 4 |NFPA-R = 1 Trimethylsilane is the organosilicon compound with the formula (CH3)3SiH. It is a trialkylsilane. The Si-H bond is reactive. Being a gas, it is less commonly used as a reagent than the related triethylsilane, which is a liquid at room temperature.

Trimethylsilane is used in the semiconductor industry as precursor to deposit dielectrics and barrier layers via plasma-enhanced chemical vapor deposition (PE-CVD). It is also used a source gas to deposit TiSiCN hard coatings via plasma-enhanced magnetron sputtering (PEMS). It has also been used to deposit silicon carbide hard coatings via low-pressure chemical vapor deposition (LP-CVD) at relatively low temperatures under 1000 °C. It is an expensive gas but safer to use than silane (SiH4); and produces properties in the coatings that cannot be undertaken by multiple source gases containing silicon and carbon.

References

References

  1. (2012). "A Study of Trimethylsilane (3MS) and Tetramethylsilane (4MS) Based α-SiCN:H/α-SiCO:H Diffusion Barrier Films". Materials.

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carbosilanestrimethylsilyl-compounds