Pentode transistor
title: "Pentode transistor" type: doc version: 1 created: 2026-02-28 author: "Wikipedia contributors" status: active scope: public tags: ["transistor-types"] topic_path: "general/transistor-types" source: "https://en.wikipedia.org/wiki/Pentode_transistor" license: "CC BY-SA 4.0" wikipedia_page_id: 0 wikipedia_revision_id: 0
::figure[src="https://upload.wikimedia.org/wikipedia/commons/2/20/Pentode_transistor_(vectorized,_optimized_SVG)_01.svg" caption="Diagram of pentode transistor as described by Lawrence E. Dickens in their patent, with a cross section view and alternative design with interposed layer of SiO₂. Gates are marked ''G₁'', ''G₂'' and ''G₃''."] ::
A pentode transistor is any transistor having five active terminals.
Early pentode transistors
One early pentode transistor was developed in the early 1950s as an improvement over the point-contact transistor.
- A point-contact transistor having three emitters. It became obsolete in the middle 1950s. Pentode field-effect transistors having 3 gates, similar to vacuum tube pentodes have also been described
Modern pentode transistors
- Triple emitter transistor in three input transistor-transistor logic gates.
- Triple collector transistor in three output integrated injection logic gates.
- Field effect transistor having three gates.
References
References
- [https://archive.today/20120701101306/http://151.207.240.23/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&u=/netahtml/search-adv.htm&r=1&p=1&f=G&l=50&d=ptxt&S1=4104673.PN.&OS=pn/4104673&RS=PN/4104673 US Patent 4,104,673 August 1,1978]
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