Homojunction
title: "Homojunction" type: doc version: 1 created: 2026-02-28 author: "Wikipedia contributors" status: active scope: public tags: ["semiconductor-structures"] topic_path: "general/semiconductor-structures" source: "https://en.wikipedia.org/wiki/Homojunction" license: "CC BY-SA 4.0" wikipedia_page_id: 0 wikipedia_revision_id: 0
::figure[src="https://upload.wikimedia.org/wikipedia/commons/2/22/PN_band.gif" caption="doping]] level, leading to built-in [[potential]] of ~0.59 V. Observe the different [[Quasi Fermi level]]s for conduction band and valence band in n and p regions (red curves)."] ::
A homojunction is a semiconductor interface that occurs between layers of similar semiconductor material; these materials have equal band gaps but typically have different doping. In most practical cases a homojunction occurs at the interface between an n-type (donor doped) and p-type (acceptor doped) semiconductor such as silicon, this is called a p–n junction.
This is not a necessary condition as the only requirement is that the same semiconductor (same band gap) is found on both sides of the junction, in contrast to a heterojunction. An n-type to n-type junction, for example, would be considered a homojunction even if the doping levels are different.
The different doping level will cause band bending, and a depletion region will be formed at the interface, as shown in the figure to the right.
Notes
References
- Yang, Edward S (1978). Fundamentals of semiconductor devices. McGraw-Hill. ISBN 0070722366
References
- Yang 1978, p. 141.
::callout[type=info title="Wikipedia Source"] This article was imported from Wikipedia and is available under the Creative Commons Attribution-ShareAlike 4.0 License. Content has been adapted to SurfDoc format. Original contributors can be found on the article history page. ::